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Dr. Mauro Rovezzi

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Former Post Doc

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Academic Career

2010 Post-Doc at the Institute for Semiconductor and Solid State Physics, Linz (Austria)
MOVPE-grown Iron-Nitrides at the GaN interface and relative structural characterization
2005:2009 PhD in Physics (Joseph Fourier University) at GILDA-CRG c/o ESRF Grenoble (France)
Study of the local order around magnetic impurities in semiconductors for spintronics
1999:2005 MSc in Physics at the University Tor Vergata, Rome (Italy)
Mo/Si multilayers characterized by standing-wave assisted XAFS

Research Interests

  • X-ray Absorption Spectroscopy and Synchrotron-radiation
  • Nano-characterization: Transmission Electron Microscopy and X-Ray Diffraction
  • Growth of semiconductors and nano-structures

Publications

  • 2010
    • S. Tardif, V. Favre-Nicolin, F. Lançon, E. Arras, M. Jamet, A. Barski, C. Porret, P. Bayle-Guillemaud, P. Pochet, T. Devillers and M. Rovezzi, Strain and correlation of self-organized Ge1−xMnx nanocolumns embedded in Ge (001), Phys. Rev. B 82, 104101 (2010).
    • W. Stefanowicz, D. Sztenkiel, B. Faina, A. Grois, M. Rovezzi, T. Devillers, F. d’Acapito, A. Navarro-Quezada, T. Li, R. Jakieła, M. Sawicki, T. Dietl, A. Bonanni, Structural and paramagnetic properties of dilute Ga1−xMnxN Phys. Rev. B 81 235210 (2010).
    • A. Navarro-Quezada, W. Stefanowicz, T. Li, B. Faina, M. Rovezzi, R.T. Lechner. T. Devillers, F. d'Acapito, G. Bauer, M. Sawicki, T. Dietl, A. Bonanni, Embedded magnetic phases in (Ga,Fe)N: Key role of growth temperature Phys. Rev. B 81, 12 (2010).
    • F. Jabeen, M. Piccin, L. Felisari, V. Grillo, G. Bais, S. Rubini, F. Martelli, F. d'Acapito, M. Rovezzi and F. Boscherini, Mn-induced growth of InAs nanowires J. Vac. Sci. Technol. B 28, 478 (2010)
  • 2009
    • M. Rovezzi, F. d'Acapito, A. Navarro-Quezada, B. Faina, T. Li, A. Bonanni, F. Filippone, A. Amore Bonapasta and T. Dietl, Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy, Phys. Rev. B 79, 195209 (2009).
    • C. Maurizio, M. Rovezzi, F. Bardelli, H. G. Pais and F. d'Acapito, Setup for optimized grazing incidence x-ray absorption experiments on thin films on substrates, Rev. Sci. Instrum. 80, 63904 (2009).
  • 2008
    • A. Bonanni, A. Navarro-Quezada, Tian Li, M. Wegscheider, Z. Matěj, V. Holý, R. T. Lechner, G. Bauer, M. Rovezzi, F. d'Acapito, M. Kiecana, M. Sawicki and T. Dietl, Controlled Aggregation of Magnetic Ions in a Semiconductor: An Experimental Demonstration, Phys. Rev. Lett. 101, 135502 (2008).
    • F. Benzi, I. Davoli, M. Rovezzi and F. d'Acapito, A new procedure for the quantitative analysis of extended x-ray absorption fine structure data in total reflection geometry, Rev. Sci. Instrum. 79, 103902 (2008).
    • M. Rovezzi, T. Devillers, E. Arras, F. d'Acapito, A. Barski, M. Jamet and P. Pochet, Atomic structure of Mn-rich nanocolumns probed by x-ray absorption spectroscopy, Appl. Phys. Lett. 92, 242510 (2008).
    • F. Graziola, F. Girardi, M. Bauer, R. Di Maggio, M. Rovezzi, H. Bertagnolli, C. Sada, G. Rossetto and S. Gross, UV-photopolymerisation of poly(methyl methacrylate)-based inorganic-organic hybrid coatings and bulk samples reinforced with methacrylate-modified zirconium oxocluster, Polymer 49, 4332 (2008).
  • 2006
    • M. Rovezzi, F. d'Acapito, A. Patelli, V. Rigato, G. Salmaso, E. Bontempi and I. Davoli, Characterization of thermally treated Mo/Si multilayer mirrors with standing wave-assisted EXAFS, Nucl. Instr. Meth. B 246, 127 (2006).
JKU Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, 4040 Linz, Austria, Tel. +43 732 2468 9639, Fax +43 732 2468 8650