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Bogdan Faina
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Post-doctoral research

Room: 114
Tel: (+43) 732/ 2468-9622
E-mail:

Personal Information

Place and date of birth: Tirgu-Carbunesti, Romania, 20 February 1982
Marital Status: Married, two children

Academic Career

since Jul 2011 Post-doctoral research, Johannes Kepler University, Linz, Austria
Subject: Growth and study of structural, magnetic, and transport properties of nitride-based magnetic semiconductors grown by MOVPE
Institute of Semiconductor and Solid State Physics
Supervisor: Assoc. Prof. Dr. Alberta Bonanni
Oct 2007 - Jun 2011 PhD program, Johannes Kepler University, Linz, Austria
Thesis: The correlation between growth parameters, structural and magnetic properties in dilute (Ga,Mn)N.
Institute of Semiconductor and Solid State Physics
Supervisor: Assoc. Prof. Dr. Alberta Bonanni
Oct 2004 - Jul 2006 MsC program, West University of Timisoara, Romania and Friedrich-Alexander Universität, Erlangen, Germany
Thesis: Growth of GaN Crystals from a Ga-Bi Solution
Department of Solid State Phyiscs and Institute VI: Electrical Engineering Materials
Supervisors: Dr. Elke Meißner and Prof. dr. Daniel Vizman
Oct 2000 - Jun 2004 Major in Physics, West University of Timisoara, Romania
Thesis: The influence of various growth parameters on the solid-liquid interface in Czochralski growth of Si
Department of Solid State Physics
Supervisor: Prof. dr. Daniel Vizman

Research Interests

  • Growth and characterization of group III nitrides based spintronic materials.
  • Simulation of Bridgman/Czochralski growth processes and growth.

Research Experience

Current - Jul 2011 Post-doctoral research Johannes Kepler University, Linz, Austria
Growth and study of structural, magnetic, and transport properties of nitridebased magnetic semiconductors grown by MOVPE
Establing a procedure for achieving ohmic contacts on nitride-based structures. Developed a system which allows the structuring of GaN for magneto-transport using laser ablation process
Oct 2007 - Jun 2011 PhD Thesis Johannes Kepler University, Linz, Austria
The correlation between growth parameters, structural and magnetic properties in dilute (Ga,Mn)N
Growth and characterization of transition metals doped GaN material system (structural, optical, magnetic and electrical properties)
Jan - Aug 2007 Research assistant West University of Timisoara Romania
Heat zone optimization of Bridgman setup using 2D simulation software CrysVUn
Finding the appropiate temperature gradient of the heat zone corresponding to minimal formation of mechanical stress during the crystalization process. Calculation grid refinement for simulation time reduction and reliable calculation results.
Oct - Dec 2006 Research assistant West University of Timisoara Romania
Influence of different growth parameters on the axial temperature gradient in a Bridgman setup
Influence of the different parameters like crucible cooling rate (pulling speed), concentration induced natural convection, solid-liquid interface shape, presence of magnetic field, microgravitation conditions
Oct 2005 - Jul 2006 Junior research assistant IISB Fraunhofer Erlangen, Germany
Growth of GaN Crystals from a Ga-Bi Solution
Growth of GaN using Bi as a surfactant, influence of diferent growth parameters on the growth layers in terms of thickness, transparency, dislocation density and electrical behaviour
Aprl - Sep 2005 Junior research assistant West University of Timisoara, Romania
Modelling of the transport phenomena, laboratory assignments
Performing different simulations which were gathered in a book for the application part of lectures on crystal growth processes
Mar - Nov 2004 Junior research assistant West University of Timisoara, Romania
Scientifc project in collaboration with IISB Fraunhofer
Design and optimization of a Edge Film Fedded Growth(EFG) setup for growth of sapphire single crystals

Expertise

Primary
  • metalorganic vapor phase epitaxy, low pressure solution growth, Bridgman, Czochralski and EFG bulk crystal growth methods, simulation of global heat and mass transport phenomena in crystal growth equipment using commercial software CrysVUn and STHAMASH3D
  • magneto-transport, spectroscopic ellipsometry, atomic force microscopy, profilometry, optical microscopy
  • laser ablation , clean room techniques, vacuum techniques, electron beam and thermal evaporation, photolithography, chemical etching, spin coating and bonding
Secondary electron paramagnetic/spin resonance, X-ray Diffraction (Laboratory and Synchrotron), Raman spectroscopy, photoluminescence
Developments
  • full development of ohmic contacts for n-type and p-type nitride-based structures, involving: thermal electrical activation (p-type samples), surface cleaning procedure, metal stacks and activation of the contacts
  • development of a laser system for structuring of nitrides for transport measurements; cleanroom procedure for obtaining ohmic contacts on Hall bars, comprising: design and structuring of the hall bar, surface cleaning (ablation residues and native oxide removal), photolithography based contacts deposition (spin coating, mask alignment, exposure, developing, metallization)

Selected publications

Conferences and Schools

  • ICPS 2012 International Conference on the Physics of the Semiconductors, 29 July -03 August 2012, Zürich, Switzerland
  • TIM-11 International Conference of Physics, 24-27 November 2011, Timisoara, Romania
  • ICNS 9 9th International Conference on Nitride Semiconductors, 10-15 July 2011, Glasgow, Scotland
  • GMe Forum 2010 Mikroelektroniktagung ME10, 7.04.2010, Vienna, Austria
  • Winter School Mountendorf 2010 22-26 February 2010, Mauterndorf, Austria
  • European School on Magnetism 2009 Models in Magnetism: From Basic Aspects to Practical Uses, 1-10 September 2009, Timisoara, Romania
  • SPINTECH V Fifth International School and Conference on Spintronics and Quantum Information Technology, 7-11 July 2009, Kraków, Poland
  • Winter School Mountendorf 2008 18 - 22 February 2008, Bad Hofgastein, Austria
  • TIM-06 Physics Conference, Timisoara, 24 - 25 November 2006, Romania

Languages

Romanian, English, German (Basic), French (Basic)

JKU Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, 4040 Linz, Austria, Tel. +43 732 2468 9639, Fax +43 732 2468 8650